PART |
Description |
Maker |
NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体 CAP 15UF 16V 10% TANT SMD-6032-28 TR-7 CAP TANTALUM 1.5UF 35V 10% SMD 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp. NEC Corp. NEC[NEC] http://
|
NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp. NEC[NEC]
|
MGF0907B 0907B MGF0907 |
L,S BAND POWER GaAs FET From old datasheet system L, S BAND POWER GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor Toshiba Corporation
|
NE650R479A NE650R479A-T1 |
0.4 W L, S-BAND POWER GaAs MES FET 0.4册,S波段功率GaAs场效应晶体管 0.4 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
HWL36YRF |
L-Band GaAs Power FET
|
Hexawave, Inc
|
HWL27NPB |
L-Band GaAs Power FET
|
Hexawave, Inc
|
HWL34YRF |
L-Band GaAs Power FET
|
Hexawave, Inc
|
HWL32NPA HWL32NPA-V1-15 |
L-Band GaAs Power FET
|
Hexawave, Inc
|
|